Transistor design for required current mirror specs. In the following current steering circuit, MOSFETs are fabricated using a technology in which µnCox = 200 µA/V2 , µpCox = 80 µA/V2 , threshold voltages Vtn = 0.6 V, Vtp = – 0.6 V. VA = 8 V and |VAp’| = 9.6 V. If all the devices have L = 0.8 µm. 1) Design the circuit so that IREF = 20 µA, I2 = 100 µA, I3 = I4 = 20 µA, and I5 = 50 µA. Use the minimum possible device widths needed to achieve proper operation of the current source Q2 for the voltage at its drain as high as +1.3 V and proper operation of the current sink Q5 with the voltage at its drain as low as – 1.3 V. Design R and specify the widths of all devices. 2) Find the respective output resistance of the current source Q2, and current sink Q5.
Transistor design for required current mirror specs. In the following current steering circuit,…
Transistor design for required current mirror specs. In the following current steering circuit, MOSFETs are fabricated using a technology in which µnCox = 200 µA/V2 , µpCox = 80...
